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MMBT8099LT1

MMBT8099LT1 onsemi


mmbt8099lt1-d.pdf
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details MMBT8099LT1 onsemi

Description: TRANS NPN 80V 0.5A SOT23-3, Power - Max: 225 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SOT-23-3 (TO-236), Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

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MMBT8099LT1 MMBT8099LT1 onsemi mmbt8099lt1-d.pdf Description: TRANS NPN 80V 0.5A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Produkt ist nicht verfügbar
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MMBT8099LT1 MMBT8099LT1 onsemi MMBT8099LT1_D-2316069.pdf Bipolar Transistors - BJT 500mA 80V NPN
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Im Einkaufswagen  Stück im Wert von  UAH
MMBT8099LT1 mmbt8099lt1-d.pdf
MMBT8099LT1
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT8099LT1 MMBT8099LT1_D-2316069.pdf
MMBT8099LT1
Hersteller: onsemi
Bipolar Transistors - BJT 500mA 80V NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH