Technische Details MMBT918 MOTOROLA
Description: RF TRANS NPN 15V 600MHZ SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Gain: 15dB, Power - Max: 225mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V, Frequency - Transition: 600MHz, Noise Figure (dB Typ @ f): 6dB @ 60MHz, Supplier Device Package: SOT-23-3.
Weitere Produktangebote MMBT918
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MMBT918 | Hersteller : ON Semiconductor |
 High Performance RF BJT IC |
Produkt ist nicht verfügbar |
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MMBT918 | Hersteller : onsemi |
Description: RF TRANS NPN 15V 600MHZ SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 15dB Power - Max: 225mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Supplier Device Package: SOT-23-3 |
Produkt ist nicht verfügbar |
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MMBT918 | Hersteller : onsemi |
Description: RF TRANS NPN 15V 600MHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 15dB Power - Max: 225mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Supplier Device Package: SOT-23-3 |
Produkt ist nicht verfügbar |
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MMBT918 | Hersteller : onsemi / Fairchild |
RF Bipolar Transistors NPN RF Transistor |
Produkt ist nicht verfügbar |