Technische Details MMBTH24-7-F Diodes Inc
Description: RF TRANS NPN 40V 400MHZ SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 40V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V, Frequency - Transition: 400MHz, Supplier Device Package: SOT-23-3.
Weitere Produktangebote MMBTH24-7-F
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MMBTH24-7-F | Hersteller : DIODES INCORPORATED |
 MMBTH24-7-F NPN SMD transistors |
Produkt ist nicht verfügbar |
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MMBTH24-7-F | Hersteller : Diodes Incorporated |
Description: RF TRANS NPN 40V 400MHZ SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V Frequency - Transition: 400MHz Supplier Device Package: SOT-23-3 |
Produkt ist nicht verfügbar |
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MMBTH24-7-F | Hersteller : Diodes Incorporated |
Description: RF TRANS NPN 40V 400MHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V Frequency - Transition: 400MHz Supplier Device Package: SOT-23-3 |
Produkt ist nicht verfügbar |
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MMBTH24-7-F | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT 40V 300mW |
Produkt ist nicht verfügbar |