MMBTRC103SS DIOTEC SEMICONDUCTOR
auf Bestellung 1120 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1120+ | 0.064 EUR |
| 2360+ | 0.03 EUR |
| 12000+ | 0.02 EUR |
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Technische Details MMBTRC103SS DIOTEC SEMICONDUCTOR
Description: BIASED BJT SOT-23 NPN 22000OHM, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote MMBTRC103SS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMBTRC103SS | Hersteller : Diotec Semiconductor |
 Description: BIASED BJT SOT-23 NPN 22000OHMPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
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