MMDT5451Q-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: SS HI VOLTAGE TRANSISTOR SOT363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 160V, 150V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 30000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMDT5451Q-7 Diodes Incorporated
Description: SS HI VOLTAGE TRANSISTOR SOT363, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: SOT-363, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Voltage - Collector Emitter Breakdown (Max): 160V, 150V, Current - Collector (Ic) (Max): 200mA, Power - Max: 200mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 1 NPN, 1 PNP, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMDT5451Q-7 nach Preis ab 0.14 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MMDT5451Q-7 | Diodes Incorporated |
Bipolar Transistors - BJT SS Hi Voltage Transistor SOT363 T&R 3K |
auf Bestellung 4743 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
MMDT5451Q-7 | Diodes Incorporated |
Description: SS HI VOLTAGE TRANSISTOR SOT363 Part Status: Active Supplier Device Package: SOT-363 Qualification: AEC-Q101 Grade: Automotive Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 160V, 150V Current - Collector (Ic) (Max): 200mA Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 47955 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MMDT5451Q-7 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Hi Voltage Transistor SOT363 T&R 3K
Bipolar Transistors - BJT SS Hi Voltage Transistor SOT363 T&R 3K
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.14 EUR |
| MMDT5451Q-7 |
|
Hersteller: Diodes Incorporated
Description: SS HI VOLTAGE TRANSISTOR SOT363
Part Status: Active
Supplier Device Package: SOT-363
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 160V, 150V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: SS HI VOLTAGE TRANSISTOR SOT363
Part Status: Active
Supplier Device Package: SOT-363
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 160V, 150V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 47955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.19 EUR |