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MMDT5451Q-7

MMDT5451Q-7 Diodes Incorporated

MMDT5451Q.pdf Hersteller: Diodes Incorporated
Description: SS HI VOLTAGE TRANSISTOR SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V, 150V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
30000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MMDT5451Q-7 Diodes Incorporated

Description: SS HI VOLTAGE TRANSISTOR SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 160V, 150V, Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote MMDT5451Q-7 nach Preis ab 0.11 EUR bis 0.72 EUR

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MMDT5451Q-7 MMDT5451Q-7 Hersteller : Diodes Incorporated MMDT5451Q.pdf Description: SS HI VOLTAGE TRANSISTOR SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V, 150V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 47955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
MMDT5451Q-7 MMDT5451Q-7 Hersteller : Diodes Incorporated MMDT5451Q-3104043.pdf Bipolar Transistors - BJT SS Hi Voltage Transistor SOT363 T&R 3K
auf Bestellung 5219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.44 EUR
100+0.21 EUR
1000+0.17 EUR
3000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 4
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MMDT5451Q-7 Hersteller : Diodes Zetex mmdt5451q.pdf NPN / PNP Small Signal Transistor Automotive AEC-Q101
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