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MMDT5551HE3-TP

MMDT5551HE3-TP Micro Commercial Co

MMDT5551HE3(SOT-363).pdf
Hersteller: Micro Commercial Co
Description: DUAL NPN SMALL SIGNAL TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MMDT5551HE3-TP Micro Commercial Co

Description: DUAL NPN SMALL SIGNAL TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 160V, Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote MMDT5551HE3-TP nach Preis ab 0.14 EUR bis 0.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
MMDT5551HE3-TP MMDT5551HE3-TP Micro Commercial Components (MCC) MMDT5551HE3(SOT-363).pdf Bipolar Transistors - BJT
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.73 EUR
10+0.44 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.18 EUR
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMDT5551HE3-TP MMDT5551HE3-TP Micro Commercial Co MMDT5551HE3(SOT-363).pdf Description: DUAL NPN SMALL SIGNAL TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3198 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
43+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMDT5551HE3-TP MMDT5551HE3(SOT-363).pdf
MMDT5551HE3-TP
Hersteller: Micro Commercial Components (MCC)
Bipolar Transistors - BJT
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.73 EUR
10+0.44 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.18 EUR
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMDT5551HE3-TP MMDT5551HE3(SOT-363).pdf
MMDT5551HE3-TP
Hersteller: Micro Commercial Co
Description: DUAL NPN SMALL SIGNAL TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
43+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH