MMFTN2362-AQ Diotec Semiconductor

Description: MOSFET SOT-23 N 60V 3A, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.