MMFTN2362 Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET SOT23 N 60V 0.08OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Power Dissipation (Max): 1.25W
Supplier Device Package: SOT-23-3 (TO-236)
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Technische Details MMFTN2362 Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23, Mounting: SMD, Case: SOT23, On-state resistance: 0.1Ω, Pulsed drain current: 12A, Power dissipation: 1.25W, Gate charge: 8.6nC, Polarisation: unipolar, Drain current: 3A, Kind of channel: enhancement, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape.
Weitere Produktangebote MMFTN2362
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MMFTN2362 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23 Mounting: SMD Case: SOT23 On-state resistance: 0.1Ω Pulsed drain current: 12A Power dissipation: 1.25W Gate charge: 8.6nC Polarisation: unipolar Drain current: 3A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape |
auf Bestellung 1668 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MMFTN2362 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 0.1Ω
Pulsed drain current: 12A
Power dissipation: 1.25W
Gate charge: 8.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 0.1Ω
Pulsed drain current: 12A
Power dissipation: 1.25W
Gate charge: 8.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
auf Bestellung 1668 Stücke:
Lieferzeit 14-21 Tag (e)