MMFTN2362 Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET SOT23 N 60V 0.08OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Power Dissipation (Max): 1.25W
Supplier Device Package: SOT-23-3 (TO-236)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details MMFTN2362 Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 1.25W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.1Ω, Mounting: SMD, Gate charge: 8.6nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MMFTN2362
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MMFTN2362 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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MMFTN2362 | Hersteller : Diotec Semiconductor |
Description: MOSFET SOT23 N 60V 0.08OHM 150C Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A Power Dissipation (Max): 1.25W Supplier Device Package: SOT-23-3 (TO-236) |
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MMFTN2362 | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, SOT-23, 60V, 3A, 150C, N |
Produkt ist nicht verfügbar |
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MMFTN2362 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |