
MMFTN3018W Diotec Semiconductor AG

Description: MOSFET, SOT-323, N, 30V, 0.1A
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
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Technische Details MMFTN3018W Diotec Semiconductor AG
Description: MOSFET, SOT-323, N, 30V, 0.1A, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V.
Weitere Produktangebote MMFTN3018W nach Preis ab 0.04 EUR bis 0.21 EUR
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MMFTN3018W | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.1A; 0.2W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.1A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 342 Stücke: Lieferzeit 7-14 Tag (e) |
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MMFTN3018W | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.1A; 0.2W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.1A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) |
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