MMFTN3422ASK Diotec Semiconductor


mmftn3422ask.pdf
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 N 30V 4.2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V
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Technische Details MMFTN3422ASK Diotec Semiconductor

Description: MOSFET SOT-23 N 30V 4.2A, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V.

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MMFTN3422ASK MMFTN3422ASK DIOTEC SEMICONDUCTOR mmftn3422ask.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 1.25W
Gate charge: 11.5nC
Polarisation: unipolar
Version: ESD
Drain current: 4.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMFTN3422ASK mmftn3422ask.pdf
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 1.25W
Gate charge: 11.5nC
Polarisation: unipolar
Version: ESD
Drain current: 4.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH