MMFTN6190KDW Diotec Semiconductor


mmftn6190kdw.pdf Hersteller: Diotec Semiconductor
Dual N-Channel Enhancement Mode FET
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Technische Details MMFTN6190KDW Diotec Semiconductor

Description: IC, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V, Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: SOT-363.

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MMFTN6190KDW MMFTN6190KDW Hersteller : DIOTEC SEMICONDUCTOR mmftn6190kdw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Pulsed drain current: 9.6A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
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MMFTN6190KDW MMFTN6190KDW Hersteller : Diotec Semiconductor mmftn6190kdw.pdf Description: IC
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
MMFTN6190KDW MMFTN6190KDW Hersteller : Diotec Semiconductor mmftn6190kdw.pdf MOSFET MOSFET, SOT-363, 30V, 1A, 150C, N
Produkt ist nicht verfügbar
MMFTN6190KDW MMFTN6190KDW Hersteller : DIOTEC SEMICONDUCTOR mmftn6190kdw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Pulsed drain current: 9.6A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar