MMFTN620KD DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Description: DIOTEC SEMICONDUCTOR - MMFTN620KD - Dual-MOSFET, Zweifach n-Kanal, 60 V, 350 mA, 1.5 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 350mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 500mW
Betriebstemperatur, max.: 150°C
| Anzahl | Privatkunde |
|---|---|
| 233+ | 1.07 EUR |
| 329+ | 0.7 EUR |
| 472+ | 0.45 EUR |
| 610+ | 0.36 EUR |
| 1000+ | 0.29 EUR |
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Technische Details MMFTN620KD DIOTEC SEMICONDUCTOR
Description: DIOTEC SEMICONDUCTOR - MMFTN620KD - Dual-MOSFET, Zweifach n-Kanal, 60 V, 350 mA, 1.5 ohm, tariffCode: 85412100, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, Dauer-Drainstrom Id, n-Kanal: 350mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 60V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-26, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 500mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote MMFTN620KD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MMFTN620KD | Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MMFTN620KD |
|
Hersteller: Diotec Semiconductor
Description: IC
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-26
Description: IC
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-26
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH