MMFTN620KD DIOTEC SEMICONDUCTOR
auf Bestellung 2902 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 960+ | 0.075 EUR |
| 1409+ | 0.051 EUR |
| 1493+ | 0.048 EUR |
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Technische Details MMFTN620KD DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA, Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-26.
Weitere Produktangebote MMFTN620KD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMFTN620KD | Hersteller : Diotec Semiconductor |
 Description: ICPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 |
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