MMFTN620KDW-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.35A; Idm: 0.5A; 0.2W; ESD
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2Ω
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 0.2W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 293+ | 0.24 EUR |
| 455+ | 0.16 EUR |
| 715+ | 0.1 EUR |
| 758+ | 0.094 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMFTN620KDW-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET, SOT-363, 60V, 0.35A, 0,, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MMFTN620KDW-AQ nach Preis ab 0.094 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MMFTN620KDW-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.35A; Idm: 0.5A; 0.2W; ESD Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.35A On-state resistance: 2Ω Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 0.2W Polarisation: unipolar Version: ESD Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.5A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MMFTN620KDW-AQ | Hersteller : Diotec Semiconductor |
MOSFET, SOT-363, 60V, 0.35A, N, 0.2W Automotive AEC-Q101 |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
 |
MMFTN620KDW-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, SOT-363, 60V, 0.35A, 0, Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
MMFTN620KDW-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, SOT-363, 60V, 0.35A, 0, Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |