MMFTP2301-AQ DIOTEC
Hersteller: DIOTEC
Description: DIOTEC - MMFTP2301-AQ - Leistungs-MOSFET, p-Kanal, 20 V, 2.8 A, 0.1 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.8A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.1ohm
SVHC: No SVHC (21-Jan-2025)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.45 EUR |
| 770+ | 0.3 EUR |
| 863+ | 0.25 EUR |
| 1041+ | 0.2 EUR |
| 1169+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMFTP2301-AQ DIOTEC
Description: MOSFET P-CH 20V 2.8A TO-236-3, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMFTP2301-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MMFTP2301-AQ | Diotec Semiconductor |
Description: MOSFET P-CH 20V 2.8A TO-236-3 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
MMFTP2301-AQ | Diotec Semiconductor |
Description: MOSFET P-CH 20V 2.8A TO-236-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MMFTP2301-AQ | Diotec Semiconductor |
MOSFETs SOT-23, P, -20V, -2.8A, 0.1?, 150C, AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MMFTP2301-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MMFTP2301-AQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET P-CH 20V 2.8A TO-236-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 2.8A TO-236-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMFTP2301-AQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET P-CH 20V 2.8A TO-236-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Description: MOSFET P-CH 20V 2.8A TO-236-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMFTP2301-AQ |
|
Hersteller: Diotec Semiconductor
MOSFETs SOT-23, P, -20V, -2.8A, 0.1?, 150C, AEC-Q101
MOSFETs SOT-23, P, -20V, -2.8A, 0.1?, 150C, AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMFTP2301-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH