MMFTP2301-AQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MMFTP2301-AQ
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details MMFTP2301-AQ Diotec Semiconductor
Description: MMFTP2301-AQ, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMFTP2301-AQ nach Preis ab 0.083 EUR bis 0.21 EUR
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MMFTP2301-AQ | Diotec Semiconductor |
Description: MMFTP2301-AQ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMFTP2301-AQ |
|
Hersteller: Diotec Semiconductor
Description: MMFTP2301-AQ
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Description: MMFTP2301-AQ
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.21 EUR |
| 150+ | 0.14 EUR |
| 172+ | 0.12 EUR |
| 204+ | 0.1 EUR |
| 250+ | 0.094 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.083 EUR |