MMFTP6312D Diotec Semiconductor
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.2 EUR |
| 9000+ | 0.15 EUR |
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Technische Details MMFTP6312D Diotec Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -7A; 0.7W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2.3A, Pulsed drain current: -7A, Power dissipation: 0.7W, Case: SOT26; SOT457, Gate-source voltage: ±8V, On-state resistance: 155mΩ, Mounting: SMD, Gate charge: 4.4nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote MMFTP6312D
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| MMFTP6312D | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -7A; 0.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -7A Power dissipation: 0.7W Case: SOT26; SOT457 Gate-source voltage: ±8V On-state resistance: 155mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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MMFTP6312D | Hersteller : Diotec Semiconductor |
Description: MOSFET SOT26 P -20V 0.115OHM Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 2.3A Supplier Device Package: SOT-26 |
Produkt ist nicht verfügbar |
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MMFTP6312D | Hersteller : Diotec Semiconductor |
Description: MOSFET SOT26 P -20V 0.115OHM Packaging: Cut Tape (CT) Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 2.3A Supplier Device Package: SOT-26 |
Produkt ist nicht verfügbar |
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| MMFTP6312D | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -7A; 0.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -7A Power dissipation: 0.7W Case: SOT26; SOT457 Gate-source voltage: ±8V On-state resistance: 155mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |