MMIX1F160N30T IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 367nC
Technology: GigaMOS™; HiPerFET™; Trench™
| Anzahl | Privatkunde |
|---|---|
| 2+ | 64.8 EUR |
| 3+ | 57.31 EUR |
| 10+ | 51.46 EUR |
| 20+ | 48.05 EUR |
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Technische Details MMIX1F160N30T IXYS
Description: MOSFET N-CH 300V 102A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V, Power Dissipation (Max): 570W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Weitere Produktangebote MMIX1F160N30T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MMIX1F160N30T | IXYS |
Description: MOSFET N-CH 300V 102A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V Power Dissipation (Max): 570W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MMIX1F160N30T | IXYS |
MOSFETs SMPD MOSFETs Power Device |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MMIX1F160N30T |
|
Hersteller: IXYS
Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F160N30T |
|
Hersteller: IXYS
MOSFETs SMPD MOSFETs Power Device
MOSFETs SMPD MOSFETs Power Device
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH