Technische Details MMRF1050HR6 NXP Semiconductors
Description: RF MOSFET LDMOS 50V NI1230, Packaging: Tape & Reel (TR), Package / Case: SOT-979A, Current Rating (Amps): 1µA, Mounting Type: Chassis Mount, Frequency: 850MHz ~ 950MHz, Configuration: 2 N-Channel, Power - Output: 1050W, Gain: 21.3dB, Technology: LDMOS (Dual), Supplier Device Package: NI-1230-4H, Voltage - Rated: 105 V, Voltage - Test: 50 V, Current - Test: 100 mA.
Weitere Produktangebote MMRF1050HR6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MMRF1050HR6 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 50V NI1230 Packaging: Tape & Reel (TR) Package / Case: SOT-979A Current Rating (Amps): 1µA Mounting Type: Chassis Mount Frequency: 850MHz ~ 950MHz Configuration: 2 N-Channel Power - Output: 1050W Gain: 21.3dB Technology: LDMOS (Dual) Supplier Device Package: NI-1230-4H Voltage - Rated: 105 V Voltage - Test: 50 V Current - Test: 100 mA |
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| MMRF1050HR6 | Hersteller : NXP Semiconductors |
 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V |
Produkt ist nicht verfügbar |