MMRF1312HR5 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Cut Tape (CT)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 1.03GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Cut Tape (CT)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 1.03GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
auf Bestellung 38 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1402.47 EUR |
| 10+ | 1360.29 EUR |
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Technische Details MMRF1312HR5 NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230, Packaging: Tape & Reel (TR), Package / Case: SOT-979A, Mounting Type: Chassis Mount, Frequency: 1.03GHz, Configuration: Dual, Power - Output: 1000W, Gain: 19.6dB, Technology: LDMOS, Supplier Device Package: NI-1230-4H, Part Status: Active, Voltage - Rated: 112 V, Voltage - Test: 50 V, Current - Test: 100 mA.
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