MMST5551Q-7-F Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS NPN 160V 0.2A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.09 EUR |
| 6000+ | 0.08 EUR |
| 9000+ | 0.07 EUR |
| 15000+ | 0.07 EUR |
| 21000+ | 0.06 EUR |
| 30000+ | 0.06 EUR |
| 75000+ | 0.06 EUR |
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Technische Details MMST5551Q-7-F Diodes Incorporated
Description: TRANS NPN 160V 0.2A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-323, Grade: Automotive, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 200 mW, Qualification: AEC-Q101.
Weitere Produktangebote MMST5551Q-7-F nach Preis ab 0.06 EUR bis 0.42 EUR
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MMST5551Q-7-F | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT SS Hi Voltage Transistor |
auf Bestellung 1567 Stücke: Lieferzeit 10-14 Tag (e) |
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MMST5551Q-7-F | Hersteller : Diodes Incorporated |
Description: TRANS NPN 160V 0.2A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 200 mW Qualification: AEC-Q101 |
auf Bestellung 121753 Stücke: Lieferzeit 10-14 Tag (e) |
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MMST5551Q-7-F | Hersteller : Diodes Inc |
Trans GP BJT NPN 160V 0.2A 200mW Automotive 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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| MMST5551Q-7-F | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.2A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry Quantity in set/package: 3000pcs. Frequency: 100...300MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MMST5551Q-7-F | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.2A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry Quantity in set/package: 3000pcs. Frequency: 100...300MHz |
Produkt ist nicht verfügbar |