Produkte > DIODES INCORPORATED > MMST5551Q-7-F

MMST5551Q-7-F Diodes Incorporated


ds30173.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.2A SOT323
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 200 mA
Grade: Automotive
Supplier Device Package: SOT-323
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
6000+0.092 EUR
9000+0.086 EUR
15000+0.08 EUR
21000+0.076 EUR
30000+0.074 EUR
75000+0.065 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MMST5551Q-7-F Diodes Incorporated

Description: TRANS NPN 160V 0.2A SOT323, Qualification: AEC-Q101, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 200 mA, Grade: Automotive, Supplier Device Package: SOT-323, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).

Weitere Produktangebote MMST5551Q-7-F nach Preis ab 0.069 EUR bis 0.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
MMST5551Q-7-F MMST5551Q-7-F Diodes Incorporated DIODS21611_1-2541825.pdf Bipolar Transistors - BJT SS Hi Voltage Transistor
auf Bestellung 1567 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.35 EUR
14+0.24 EUR
100+0.13 EUR
1000+0.11 EUR
3000+0.083 EUR
9000+0.071 EUR
24000+0.069 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMST5551Q-7-F MMST5551Q-7-F Diodes Incorporated ds30173.pdf Description: TRANS NPN 160V 0.2A SOT323
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 200 mA
Grade: Automotive
Supplier Device Package: SOT-323
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 121753 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.5 EUR
69+0.31 EUR
111+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMST5551Q-7-F DIODS21611_1-2541825.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Hi Voltage Transistor
auf Bestellung 1567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+0.35 EUR
14+0.24 EUR
100+0.13 EUR
1000+0.11 EUR
3000+0.083 EUR
9000+0.071 EUR
24000+0.069 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MMST5551Q-7-F ds30173.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.2A SOT323
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 200 mA
Grade: Automotive
Supplier Device Package: SOT-323
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 121753 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
69+0.31 EUR
111+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH