MNS1N6627US/TR Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE GEN PURP 440V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 440 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 32.69 EUR |
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Technische Details MNS1N6627US/TR Microchip Technology
Description: DIODE GEN PURP 440V 1.75A E-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 1.75A, Supplier Device Package: E-MELF, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 440 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 440 V.
Weitere Produktangebote MNS1N6627US/TR nach Preis ab 32.69 EUR bis 35.18 EUR
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MNS1N6627US/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 440V 1.75A E-MELF Packaging: Cut Tape (CT) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: E-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 440 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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