MOT120N10A Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.66 EUR |
| 10+ | 2.8 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1 EUR |
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Technische Details MOT120N10A Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A, Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 130W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V.
Weitere Produktangebote MOT120N10A nach Preis ab 1.22 EUR bis 1.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| MOT120N10A | Hersteller : MOT |
N-CHANNEL MOSFET ODPOWIEDNIK: IRF3710; IRF540N; MOT120N10A TO220 MOT TMOT120N10A MOT Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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