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MOT150N03A MOT-


MOT150N03A_MOT-MOS.pdf
Hersteller: MOT-
Transistor N-Channel MOSFET; 30V; 20V; 4,8mOhm; 150A; 130W; -55°C ~ 175°C; Equivalent: IRL2203N; MOT150N03A TO-220 MOT TMOT150N03A MOT
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
30+1.29 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MOT150N03A MOT-

Description: MOSFET N-CH 30V 150A 3.9m To-22, Packaging: Tube, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Power Dissipation (Max): 130W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V.

Weitere Produktangebote MOT150N03A nach Preis ab 0.9 EUR bis 4.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
MOT150N03A Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+2.55 EUR
100+1.54 EUR
500+1.07 EUR
1000+0.9 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MOT150N03A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.24 EUR
10+2.55 EUR
100+1.54 EUR
500+1.07 EUR
1000+0.9 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH