MOT55N06B MOT-
Hersteller: MOT-
Transistor N-Channel MOSFET; 60V; 20V; 22mOhm; 55A; 100W; -55°C ~ 150°C; Similar to: FQP50N06; IRLZ44N; STP55NF06; MOT55N06B TO220 MOT TMOT55N06B MOT
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 1.3 EUR |
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Technische Details MOT55N06B MOT-
Description: MOSFET N-CH 60V 55A m To-220, Packaging: Tube, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A, Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V, Power Dissipation (Max): 100W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V.
Weitere Produktangebote MOT55N06B nach Preis ab 0.75 EUR bis 3.5 EUR
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MOT55N06B | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 55A m To-220 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT55N06B |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.75 EUR |