Technische Details MP6KE150CA MICROSEMI
Description: TVS DIODE 128VWM 207VC T18, Packaging: Bulk, Package / Case: T-18, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 2.9A, Voltage - Reverse Standoff (Typ): 128V, Supplier Device Package: T-18, Bidirectional Channels: 1, Voltage - Breakdown (Min): 143V, Voltage - Clamping (Max) @ Ipp: 207V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Weitere Produktangebote MP6KE150CA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MP6KE150CA | Microchip Technology |
 Description: TVS DIODE 128VWM 207VC T18Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.9A Voltage - Reverse Standoff (Typ): 128V Supplier Device Package: T-18 Bidirectional Channels: 1 Voltage - Breakdown (Min): 143V Voltage - Clamping (Max) @ Ipp: 207V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MP6KE150CA | Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 150V 5% 600W bi |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MP6KE150CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 143V; 2.9A; bidirectional; 0.6kW; Ch: 1; -65÷150°C Type of diode: TVS Max. off-state voltage: 128V Breakdown voltage: 143V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Mounting: THT Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MP6KE150CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 128VWM 207VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: T-18
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 128VWM 207VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: T-18
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MP6KE150CA |
|
Hersteller: Microchip Technology
ESD Protection Diodes / TVS Diodes TVS 150V 5% 600W bi
ESD Protection Diodes / TVS Diodes TVS 150V 5% 600W bi
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MP6KE150CA |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 143V; 2.9A; bidirectional; 0.6kW; Ch: 1; -65÷150°C
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Mounting: THT
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 143V; 2.9A; bidirectional; 0.6kW; Ch: 1; -65÷150°C
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Mounting: THT
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH