
MPG06B-E3/53 Vishay General Semiconductor
auf Bestellung 8229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 0.71 EUR |
10+ | 0.60 EUR |
100+ | 0.45 EUR |
500+ | 0.35 EUR |
1000+ | 0.27 EUR |
3000+ | 0.24 EUR |
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Technische Details MPG06B-E3/53 Vishay General Semiconductor
Description: DIODE GEN PURP 100V 1A MPG06, Packaging: Tape & Box (TB), Package / Case: MPG06, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 600 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: MPG06, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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MPG06B-E3/53 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Box (TB) Package / Case: MPG06, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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