Technische Details MPQ6700 PBFREE Central Semiconductor
Description: TRANS 2NPN/2PNP 40V 200MA TO-116, Supplier Device Package: TO-116, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 40V, Current - Collector (Ic) (Max): 200mA, Power - Max: 500mW, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: 2 NPN, 2 PNP, Mounting Type: Through Hole, Package / Case: 14-DIP (0.300", 7.62mm), Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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MPQ6700 PBFREE | Central Semiconductor Corp |
Description: TRANS 2NPN/2PNP 40V 200MA TO-116Supplier Device Package: TO-116 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 500mW Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: 2 NPN, 2 PNP Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MPQ6700 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TRANS 2NPN/2PNP 40V 200MA TO-116
Supplier Device Package: TO-116
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN, 2 PNP
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Description: TRANS 2NPN/2PNP 40V 200MA TO-116
Supplier Device Package: TO-116
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN, 2 PNP
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



