MPS5179RLRP
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Technische Details MPS5179RLRP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Supplier Device Package: TO-92 (TO-226), Noise Figure (dB Typ @ f): 5dB @ 200MHz, Frequency - Transition: 2GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V, Voltage - Collector Emitter Breakdown (Max): 12V, Current - Collector (Ic) (Max): 50mA, Power - Max: 350mW, Gain: 15dB, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Bulk.
Weitere Produktangebote MPS5179RLRP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MPS5179RLRP | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Supplier Device Package: TO-92 (TO-226) Noise Figure (dB Typ @ f): 5dB @ 200MHz Frequency - Transition: 2GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 50mA Power - Max: 350mW Gain: 15dB Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MPS5179RLRP |
|
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Supplier Device Package: TO-92 (TO-226)
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Gain: 15dB
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Supplier Device Package: TO-92 (TO-226)
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Gain: 15dB
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH