MPS6601RLRAG onsemi
Hersteller: onsemi
Description: TRANS NPN 25V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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Technische Details MPS6601RLRAG onsemi
Description: TRANS NPN 25V 1A TO92, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 1 A, Part Status: Obsolete, Supplier Device Package: TO-92 (TO-226), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Packaging: Tape & Reel (TR).
Weitere Produktangebote MPS6601RLRAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MPS6601RLRAG | onsemi |
Description: TRANS NPN 25V 1A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MPS6601RLRAG | onsemi |
Bipolar Transistors - BJT 1A 25V NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MPS6601RLRAG |
|
Hersteller: onsemi
Description: TRANS NPN 25V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Cut Tape (CT)
Description: TRANS NPN 25V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6601RLRAG |
|
Hersteller: onsemi
Bipolar Transistors - BJT 1A 25V NPN
Bipolar Transistors - BJT 1A 25V NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH