MPSH81
Hersteller:
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MPSH81
Description: RF TRANS PNP 20V 600MHZ TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 20V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Frequency - Transition: 600MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete.
Weitere Produktangebote MPSH81
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MPSH81 | onsemi |
Description: RF TRANS PNP 20V 600MHZ TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 600MHz Supplier Device Package: TO-92-3 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MPSH81 | Central Semiconductor Corp |
Description: RF TRANS PNP 20V 600MHZ TO-92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 600MHz Supplier Device Package: TO-92 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MPSH81 | onsemi / Fairchild |
RF Bipolar Transistors PNP RF Transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MPSH81 |
|
Hersteller: onsemi
Description: RF TRANS PNP 20V 600MHZ TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Description: RF TRANS PNP 20V 600MHZ TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSH81 |
|
Hersteller: Central Semiconductor Corp
Description: RF TRANS PNP 20V 600MHZ TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Description: RF TRANS PNP 20V 600MHZ TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSH81 |
|
Hersteller: onsemi / Fairchild
RF Bipolar Transistors PNP RF Transistor
RF Bipolar Transistors PNP RF Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH