MPSW05G onsemi
Hersteller: onsemi
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
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Technische Details MPSW05G onsemi
Description: TRANS NPN 60V 0.5A TO92, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92 (TO-226), Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.
Weitere Produktangebote MPSW05G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MPSW05G | Hersteller : onsemi |
Description: TRANS NPN 60V 0.5A TO92 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
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MPSW05G | Hersteller : onsemi |
Bipolar Transistors - BJT 500mA 60V 1W NPN |
Produkt ist nicht verfügbar |