MPSW51G onsemi
Hersteller: onsemi
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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Technische Details MPSW51G onsemi
Description: TRANS PNP 30V 1A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92 (TO-226), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 1 W.
Weitere Produktangebote MPSW51G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MPSW51G | onsemi |
Description: TRANS PNP 30V 1A TO92 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MPSW51G | onsemi |
Bipolar Transistors - BJT 1A 40V 1W PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MPSW51G |
|
Hersteller: onsemi
Description: TRANS PNP 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSW51G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 1A 40V 1W PNP
Bipolar Transistors - BJT 1A 40V 1W PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH