MR2A16AYS35 Everspin Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 43.76 EUR |
| 10+ | 40.48 EUR |
| 25+ | 39.19 EUR |
| 50+ | 38.22 EUR |
| 100+ | 37.83 EUR |
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Technische Details MR2A16AYS35 Everspin Technologies
Description: IC RAM 4MBIT PARALLEL 44TSOP2, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: MRAM (Magnetoresistive RAM), Memory Format: RAM, Supplier Device Package: 44-TSOP2, Part Status: Active, Write Cycle Time - Word, Page: 35ns, Memory Interface: Parallel, Access Time: 35 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote MR2A16AYS35 nach Preis ab 53.82 EUR bis 65.56 EUR
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MR2A16AYS35 | Everspin Technologies Inc. |
 Description: IC RAM 4MBIT PARALLEL 44TSOP2Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: MRAM (Magnetoresistive RAM) Memory Format: RAM Supplier Device Package: 44-TSOP2 Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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| MR2A16AYS35 | Everspin Technologies Inc |
Статична пам'ять SRAM, Uживл, В = 3,0 ... 3,6, Інтерфейс = Паралельний, Об. пам. = 4 Мбіт, Орг. пам. = MRAM (магніторезестивна), Тдост/Частота = 35 нс, Тексп, °С = 0...+70, SRAM сумісна,... Інтегральні мікросхеми Корпус: TSOP-44 Од. вим: шт Anzahl je Verpackung: 1 Stücke |
verfügbar 1 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| MR2A16AYS35 |
|
Hersteller: Everspin Technologies Inc.
Description: IC RAM 4MBIT PARALLEL 44TSOP2
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 44-TSOP2
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC RAM 4MBIT PARALLEL 44TSOP2
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 44-TSOP2
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 65.56 EUR |
| 10+ | 60.67 EUR |
| 25+ | 58.73 EUR |
| 50+ | 57.27 EUR |
| 135+ | 55.23 EUR |
| 270+ | 53.82 EUR |
| MR2A16AYS35 |
|
Hersteller: Everspin Technologies Inc
Статична пам'ять SRAM, Uживл, В = 3,0 ... 3,6, Інтерфейс = Паралельний, Об. пам. = 4 Мбіт, Орг. пам. = MRAM (магніторезестивна), Тдост/Частота = 35 нс, Тексп, °С = 0...+70, SRAM сумісна,... Інтегральні мікросхеми Корпус: TSOP-44 Од. вим: шт
Anzahl je Verpackung: 1 Stücke
Статична пам'ять SRAM, Uживл, В = 3,0 ... 3,6, Інтерфейс = Паралельний, Об. пам. = 4 Мбіт, Орг. пам. = MRAM (магніторезестивна), Тдост/Частота = 35 нс, Тексп, °С = 0...+70, SRAM сумісна,... Інтегральні мікросхеми Корпус: TSOP-44 Од. вим: шт
Anzahl je Verpackung: 1 Stücke
verfügbar 1 Stücke: