MR851G ON Semiconductor


MR850-D-80314.pdf
Hersteller: ON Semiconductor
Rectifiers RECOVERY RECTIFIER 3A 100V
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Technische Details MR851G ON Semiconductor

Description: DIODE GEN PURP 100V 3A AXIAL, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 125°C, Supplier Device Package: Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 300 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AA, DO-27, Axial, Packaging: Box, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A.

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MR851G MR851G onsemi mr850-d.pdf Description: DIODE GEN PURP 100V 3A AXIAL
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Box
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MR851G mr850-d.pdf
Hersteller: onsemi
Description: DIODE GEN PURP 100V 3A AXIAL
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Box
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH