MRF1K50HR5 NXP Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 50+ | 466.85 EUR |
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Mindestmenge:
50 Stücke
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Technische Details MRF1K50HR5 NXP Semiconductors
Description: RF MOSFET LDMOS NI1230, Packaging: Tape & Reel (TR), Package / Case: SOT-979A, Mounting Type: Chassis Mount, Frequency: 1.8MHz ~ 500MHz, Power - Output: 1500W, Gain: 22.5dB, Technology: LDMOS, Supplier Device Package: NI-1230-4H, Part Status: Active, Voltage - Rated: 50 V.
Weitere Produktangebote MRF1K50HR5 nach Preis ab 592.58 EUR bis 729.23 EUR
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MRF1K50HR5 | NXP USA Inc. |
 Description: RF MOSFET LDMOS NI1230Packaging: Tape & Reel (TR) Package / Case: SOT-979A Mounting Type: Chassis Mount Frequency: 1.8MHz ~ 500MHz Power - Output: 1500W Gain: 22.5dB Technology: LDMOS Supplier Device Package: NI-1230-4H Part Status: Active Voltage - Rated: 50 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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MRF1K50HR5 | NXP USA Inc. |
Description: RF MOSFET LDMOS NI1230 Packaging: Cut Tape (CT) Package / Case: SOT-979A Mounting Type: Chassis Mount Frequency: 1.8MHz ~ 500MHz Power - Output: 1500W Gain: 22.5dB Technology: LDMOS Supplier Device Package: NI-1230-4H Part Status: Active Voltage - Rated: 50 V |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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| MRF1K50HR5 | NXP |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 135V; 36A; 1.667kW Type of transistor: N-MOSFET Drain-source voltage: 135V Drain current: 36A Power dissipation: 1.667kW Gate-source voltage: ±10V Mounting: SMD Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MRF1K50HR5 |
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Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS NI1230
Packaging: Tape & Reel (TR)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 500MHz
Power - Output: 1500W
Gain: 22.5dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 50 V
Description: RF MOSFET LDMOS NI1230
Packaging: Tape & Reel (TR)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 500MHz
Power - Output: 1500W
Gain: 22.5dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 50 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 592.58 EUR |
| MRF1K50HR5 |
|
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS NI1230
Packaging: Cut Tape (CT)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 500MHz
Power - Output: 1500W
Gain: 22.5dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 50 V
Description: RF MOSFET LDMOS NI1230
Packaging: Cut Tape (CT)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 500MHz
Power - Output: 1500W
Gain: 22.5dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 50 V
auf Bestellung 83 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 729.23 EUR |
| 10+ | 631.62 EUR |
| 25+ | 607.26 EUR |
| MRF1K50HR5 |
|
Hersteller: NXP
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 135V; 36A; 1.667kW
Type of transistor: N-MOSFET
Drain-source voltage: 135V
Drain current: 36A
Power dissipation: 1.667kW
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 135V; 36A; 1.667kW
Type of transistor: N-MOSFET
Drain-source voltage: 135V
Drain current: 36A
Power dissipation: 1.667kW
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)