MRF581A Advanced Semiconductor, Inc.
auf Bestellung 3604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.39 EUR |
| 10+ | 12.09 EUR |
| 25+ | 11.53 EUR |
| 100+ | 10.01 EUR |
| 500+ | 8.71 EUR |
| 1000+ | 7.69 EUR |
| 2500+ | 7.43 EUR |
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Technische Details MRF581A Advanced Semiconductor, Inc.
Description: RF TRANS NPN 15V 5GHZ MICRO X, Packaging: Bulk, Package / Case: Micro-X ceramic (84C), Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13dB ~ 15.5dB, Power - Max: 1.25W, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz, Supplier Device Package: Micro-X ceramic (84C), Part Status: Obsolete.
Weitere Produktangebote MRF581A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| MRF581A |
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auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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MRF581A | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 15V 5GHZ MICRO X Packaging: Bulk Package / Case: Micro-X ceramic (84C) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB ~ 15.5dB Power - Max: 1.25W Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Supplier Device Package: Micro-X ceramic (84C) Part Status: Obsolete |
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