MRFE6VP5600HR5 NXP
Hersteller: NXP
Description: NXP - MRFE6VP5600HR5 - HF-FET-Transistor, 130 VDC, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230
tariffCode: 85412900
Transistormontage: Flanschklemme
Drain-Source-Spannung Vds: 130VDC
rohsCompliant: YES
Dauer-Drainstrom Id: -A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Betriebsfrequenz, max.: 600MHz
Betriebsfrequenz, min.: 1.8MHz
euEccn: NLR
Verlustleistung: 1.667kW
Bauform - Transistor: NI-1230
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 225°C
SVHC: No SVHC (27-Jun-2018)
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Technische Details MRFE6VP5600HR5 NXP
Description: NXP - MRFE6VP5600HR5 - HF-FET-Transistor, 130 VDC, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230, tariffCode: 85412900, Transistormontage: Flanschklemme, Drain-Source-Spannung Vds: 130VDC, rohsCompliant: YES, Dauer-Drainstrom Id: -A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Betriebsfrequenz, max.: 600MHz, Betriebsfrequenz, min.: 1.8MHz, euEccn: NLR, Verlustleistung: 1.667kW, Bauform - Transistor: NI-1230, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 225°C, SVHC: No SVHC (27-Jun-2018).
Weitere Produktangebote MRFE6VP5600HR5 nach Preis ab 633.18 EUR bis 1384.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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MRFE6VP5600HR5 | NXP Semiconductors |
RF MOSFET Transistors VHV6 600W 50V NI1230H |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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MRFE6VP5600HR5 | NXP USA Inc. |
Description: RF MOSFET LDMOS 50V NI1230 Configuration: Dual Frequency: 230MHz Mounting Type: Chassis Mount Package / Case: SOT-979A Packaging: Tape & Reel (TR) Current - Test: 100 mA Voltage - Test: 50 V Voltage - Rated: 130 V Part Status: Active Supplier Device Package: NI-1230-4H Technology: LDMOS Gain: 25dB Power - Output: 600W |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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MRFE6VP5600HR5 | NXP USA Inc. |
Description: RF MOSFET LDMOS 50V NI1230 Frequency: 230MHz Mounting Type: Chassis Mount Package / Case: SOT-979A Packaging: Cut Tape (CT) Current - Test: 100 mA Voltage - Test: 50 V Voltage - Rated: 130 V Part Status: Active Supplier Device Package: NI-1230-4H Technology: LDMOS Gain: 25dB Power - Output: 600W Configuration: Dual |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| MRFE6VP5600HR5 |
|
Hersteller: NXP Semiconductors
RF MOSFET Transistors VHV6 600W 50V NI1230H
RF MOSFET Transistors VHV6 600W 50V NI1230H
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 762.03 EUR |
| 10+ | 633.18 EUR |
| MRFE6VP5600HR5 |
|
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Configuration: Dual
Frequency: 230MHz
Mounting Type: Chassis Mount
Package / Case: SOT-979A
Packaging: Tape & Reel (TR)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 130 V
Part Status: Active
Supplier Device Package: NI-1230-4H
Technology: LDMOS
Gain: 25dB
Power - Output: 600W
Description: RF MOSFET LDMOS 50V NI1230
Configuration: Dual
Frequency: 230MHz
Mounting Type: Chassis Mount
Package / Case: SOT-979A
Packaging: Tape & Reel (TR)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 130 V
Part Status: Active
Supplier Device Package: NI-1230-4H
Technology: LDMOS
Gain: 25dB
Power - Output: 600W
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1152.75 EUR |
| MRFE6VP5600HR5 |
|
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Frequency: 230MHz
Mounting Type: Chassis Mount
Package / Case: SOT-979A
Packaging: Cut Tape (CT)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 130 V
Part Status: Active
Supplier Device Package: NI-1230-4H
Technology: LDMOS
Gain: 25dB
Power - Output: 600W
Configuration: Dual
Description: RF MOSFET LDMOS 50V NI1230
Frequency: 230MHz
Mounting Type: Chassis Mount
Package / Case: SOT-979A
Packaging: Cut Tape (CT)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 130 V
Part Status: Active
Supplier Device Package: NI-1230-4H
Technology: LDMOS
Gain: 25dB
Power - Output: 600W
Configuration: Dual
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1384.54 EUR |
| 10+ | 1218.96 EUR |