MRFX1K80GNR5 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 65V OM1230G-4
Packaging: Tape & Reel (TR)
Package / Case: OM-1230G-4L
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 470MHz
Power - Output: 1800W
Gain: 24dB
Technology: LDMOS
Supplier Device Package: OM-1230G-4L
Part Status: Active
Voltage - Test: 65 V
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Technische Details MRFX1K80GNR5 NXP USA Inc.
Description: RF MOSFET LDMOS 65V OM1230G-4, Packaging: Tape & Reel (TR), Package / Case: OM-1230G-4L, Mounting Type: Chassis Mount, Frequency: 1.8MHz ~ 470MHz, Power - Output: 1800W, Gain: 24dB, Technology: LDMOS, Supplier Device Package: OM-1230G-4L, Part Status: Active, Voltage - Test: 65 V.
Weitere Produktangebote MRFX1K80GNR5 nach Preis ab 403.67 EUR bis 473.63 EUR
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MRFX1K80GNR5 | NXP USA Inc. |
Description: RF MOSFET LDMOS 65V OM1230G-4 Packaging: Cut Tape (CT) Package / Case: OM-1230G-4L Mounting Type: Chassis Mount Frequency: 1.8MHz ~ 470MHz Power - Output: 1800W Gain: 24dB Technology: LDMOS Supplier Device Package: OM-1230G-4L Part Status: Active Voltage - Test: 65 V |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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MRFX1K80GNR5 | NXP Semiconductors |
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MRFX1K80GNR5 |
|
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 65V OM1230G-4
Packaging: Cut Tape (CT)
Package / Case: OM-1230G-4L
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 470MHz
Power - Output: 1800W
Gain: 24dB
Technology: LDMOS
Supplier Device Package: OM-1230G-4L
Part Status: Active
Voltage - Test: 65 V
Description: RF MOSFET LDMOS 65V OM1230G-4
Packaging: Cut Tape (CT)
Package / Case: OM-1230G-4L
Mounting Type: Chassis Mount
Frequency: 1.8MHz ~ 470MHz
Power - Output: 1800W
Gain: 24dB
Technology: LDMOS
Supplier Device Package: OM-1230G-4L
Part Status: Active
Voltage - Test: 65 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 459.04 EUR |
| 10+ | 411.46 EUR |
| MRFX1K80GNR5 |
|
Hersteller: NXP Semiconductors
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 473.63 EUR |
| 10+ | 403.67 EUR |