Technische Details MRT130KP275CV Microchip / Microsemi
Category: Bidirectional TVS THT diodes, Description: Diode: TVS; 300V; 292A; bidirectional; 130kW; Ch: 1; -55÷150°C, Number of channels: 1, Mounting: THT, Operating temperature: -55...150°C, Breakdown voltage: 300V, Max. forward impulse current: 292A, Peak pulse power dissipation: 130kW, Max. off-state voltage: 275V, Semiconductor structure: bidirectional, Type of diode: TVS.
Weitere Produktangebote MRT130KP275CV
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MRT130KP275CV | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 300V; 292A; bidirectional; 130kW; Ch: 1; -55÷150°C Number of channels: 1 Mounting: THT Operating temperature: -55...150°C Breakdown voltage: 300V Max. forward impulse current: 292A Peak pulse power dissipation: 130kW Max. off-state voltage: 275V Semiconductor structure: bidirectional Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MRT130KP275CV |
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 300V; 292A; bidirectional; 130kW; Ch: 1; -55÷150°C
Number of channels: 1
Mounting: THT
Operating temperature: -55...150°C
Breakdown voltage: 300V
Max. forward impulse current: 292A
Peak pulse power dissipation: 130kW
Max. off-state voltage: 275V
Semiconductor structure: bidirectional
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 300V; 292A; bidirectional; 130kW; Ch: 1; -55÷150°C
Number of channels: 1
Mounting: THT
Operating temperature: -55...150°C
Breakdown voltage: 300V
Max. forward impulse current: 292A
Peak pulse power dissipation: 130kW
Max. off-state voltage: 275V
Semiconductor structure: bidirectional
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH