MSC015SMA070S Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.82 EUR |
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Technische Details MSC015SMA070S Microchip Technology
Description: SICFET N-CH 700V 126A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 126A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ), Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V.
Weitere Produktangebote MSC015SMA070S nach Preis ab 31.77 EUR bis 81.54 EUR
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MSC015SMA070S | Microsemi |
 SiC MOSFETs |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC015SMA070S | Microchip Technology |
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auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC015SMA070S | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W; SMA Technology: SiC Mounting: SMD Case: D3PAK; TO268 Power dissipation: 370W Kind of package: tube Manufacturer standard package: 30pcs. Pulsed drain current: 315A Gate charge: 215nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement Drain-source voltage: 700V Type of transistor: N-MOSFET Family: SMA On-state resistance: 19mΩ |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| MSC015SMA070S | Microchip Technology |
Description: SICFET N-CH 700V 126A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ) Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V |
auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC015SMA070S |
|
Hersteller: Microsemi
SiC MOSFETs
SiC MOSFETs
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 65.03 EUR |
| MSC015SMA070S |
|
Hersteller: Microchip Technology
SiC MOSFETs Automotive AEC-Q101
SiC MOSFETs Automotive AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 81.54 EUR |
| MSC015SMA070S |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W; SMA
Technology: SiC
Mounting: SMD
Case: D3PAK; TO268
Power dissipation: 370W
Kind of package: tube
Manufacturer standard package: 30pcs.
Pulsed drain current: 315A
Gate charge: 215nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 19mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W; SMA
Technology: SiC
Mounting: SMD
Case: D3PAK; TO268
Power dissipation: 370W
Kind of package: tube
Manufacturer standard package: 30pcs.
Pulsed drain current: 315A
Gate charge: 215nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 19mΩ
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| MSC015SMA070S |
Hersteller: Microchip Technology
Description: SICFET N-CH 700V 126A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
Description: SICFET N-CH 700V 126A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.47 EUR |
| 25+ | 31.77 EUR |