Technische Details MSC015SMA070S Microchip Technology
Description: SICFET N-CH 700V 126A D3PAK, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ), Power Dissipation (Max): 370W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 126A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote MSC015SMA070S nach Preis ab 54.79 EUR bis 59.4 EUR
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MSC015SMA070S | Microchip Technology |
 Description: SICFET N-CH 700V 126A D3PAKInput Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +23V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ) Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 126A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Microchip Technology
Description: SICFET N-CH 700V 126A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ)
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: SICFET N-CH 700V 126A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ)
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 59.4 EUR |
| 25+ | 54.79 EUR |