MSC017SMA120J Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET SIC 1200V 17 MOHM SOT-227
Packaging: Bulk
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.24 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details MSC017SMA120J Microchip Technology
Description: MOSFET SIC 1200V 17 MOHM SOT-227, Packaging: Bulk, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ), Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V.
Weitere Produktangebote MSC017SMA120J nach Preis ab 103.65 EUR bis 129.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MSC017SMA120J | Microchip Technology |
Discrete Semiconductor Modules MOSFET SIC 1200 V 17 mOhm SOT-227 |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
MSC017SMA120J | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; single transistor; 1.2kV; 62A; SOT227B; screw; Idm: 280A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 62A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 22mΩ Pulsed drain current: 280A Power dissipation: 278W Technology: SiC Gate-source voltage: -10...23V Mechanical mounting: screw Kind of package: tube Manufacturer standard package: 10pcs. |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MSC017SMA120J |
|
Hersteller: Microchip Technology
Discrete Semiconductor Modules MOSFET SIC 1200 V 17 mOhm SOT-227
Discrete Semiconductor Modules MOSFET SIC 1200 V 17 mOhm SOT-227
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 129.19 EUR |
| 30+ | 119.13 EUR |
| 100+ | 103.65 EUR |
| MSC017SMA120J |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 62A; SOT227B; screw; Idm: 280A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 22mΩ
Pulsed drain current: 280A
Power dissipation: 278W
Technology: SiC
Gate-source voltage: -10...23V
Mechanical mounting: screw
Kind of package: tube
Manufacturer standard package: 10pcs.
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 62A; SOT227B; screw; Idm: 280A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 22mΩ
Pulsed drain current: 280A
Power dissipation: 278W
Technology: SiC
Gate-source voltage: -10...23V
Mechanical mounting: screw
Kind of package: tube
Manufacturer standard package: 10pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)