MSC025SMA120B Microchip Technology

Description: SICFET N-CH 1.2KV 103A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.