Technische Details MSC030SDA170B Microchip Technology
Description: DIODE SIL CARB 1.7KV 82A TO247, Current - Reverse Leakage @ Vr: 200 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io): 82A, Capacitance @ Vr, F: 2070pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote MSC030SDA170B
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MSC030SDA170B | Hersteller : Microchip Technology |
 Description: DIODE SIL CARB 1.7KV 82A TO247Current - Reverse Leakage @ Vr: 200 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io): 82A Capacitance @ Vr, F: 2070pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
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