MSC031SMC120B4N MICROCHIP TECHNOLOGY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 161A; 362W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 51A, Power dissipation: 362W, Case: TO247-4-notch, On-state resistance: 42mΩ, Mounting: THT, Gate charge: 70nC, Kind of channel: enhancement, Manufacturer standard package: 30pcs., Pulsed drain current: 161A, Features of semiconductor devices: Kelvin terminal, Kind of package: tube, Family: SMC.