
MSC040SMA120B4N Microchip Technology
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 29.60 EUR |
30+ | 27.28 EUR |
120+ | 23.74 EUR |
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Technische Details MSC040SMA120B4N Microchip Technology
Description: MOSFET SIC 1200 V 40 MOHM TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 71A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 372W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1962 pF @ 1000 V.
Weitere Produktangebote MSC040SMA120B4N nach Preis ab 27.56 EUR bis 29.88 EUR
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MSC040SMA120B4N | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 372W (Tc) Vgs(th) (Max) @ Id: 5V @ 2mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1962 pF @ 1000 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC040SMA120B4N | Hersteller : Microchip Technology |
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