MSC040SMA120S Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.3 EUR |
| 10+ | 41.78 EUR |
| 30+ | 40.42 EUR |
| 60+ | 35.27 EUR |
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Technische Details MSC040SMA120S Microchip Technology
Description: SICFET N-CH 1200V 64A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 303W, Vgs(th) (Max) @ Id: 2.6V @ 2mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Weitere Produktangebote MSC040SMA120S nach Preis ab 46.16 EUR bis 57.55 EUR
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MSC040SMA120S | Microchip Technology |
 Trans MOSFET N-CH SiC 1.2KV 64A 3-Pin(2+Tab) D3PAK Tube Automotive AEC-Q101 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC040SMA120S | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W Power dissipation: 303W Mounting: SMD Case: D3PAK; TO268 Kind of package: tube Gate charge: 137nC Polarisation: unipolar Technology: SiC Drain current: 45A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Family: SMA On-state resistance: 50mΩ Manufacturer standard package: 30pcs. Pulsed drain current: 159A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| MSC040SMA120S | Microchip Technology |
Description: SICFET N-CH 1200V 64A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 303W Vgs(th) (Max) @ Id: 2.6V @ 2mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MSC040SMA120S |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH SiC 1.2KV 64A 3-Pin(2+Tab) D3PAK Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 1.2KV 64A 3-Pin(2+Tab) D3PAK Tube Automotive AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 57.55 EUR |
| MSC040SMA120S |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK; TO268
Kind of package: tube
Gate charge: 137nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 50mΩ
Manufacturer standard package: 30pcs.
Pulsed drain current: 159A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK; TO268
Kind of package: tube
Gate charge: 137nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 50mΩ
Manufacturer standard package: 30pcs.
Pulsed drain current: 159A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| MSC040SMA120S |
Hersteller: Microchip Technology
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.16 EUR |