MSC050SDA070S Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.1 EUR |
| 25+ | 9.31 EUR |
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Technische Details MSC050SDA070S Microchip Technology
Description: DIODE SIL CARBIDE 700V 88A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2034pF @ 1V, 1MHz, Current - Average Rectified (Io): 88A, Supplier Device Package: D3Pak, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 700 V.
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