Technische Details MSC060SMA070B Microchip Technology
Description: SICFET N-CH 700V 39A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 143W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote MSC060SMA070B nach Preis ab 14.81 EUR bis 16.05 EUR
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MSC060SMA070B | Microchip Technology |
 Description: SICFET N-CH 700V 39A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +23V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC060SMA070B |
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Hersteller: Microchip Technology
Description: SICFET N-CH 700V 39A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 700V 39A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.05 EUR |
| 25+ | 14.81 EUR |