MSC060SMA070S MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Drain-source voltage: 700V
Drain current: 26A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: SiC
Kind of channel: enhancement
Pulsed drain current: 93A
Mounting: SMD
Case: D3PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 10.15 EUR |
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Technische Details MSC060SMA070S MICROCHIP TECHNOLOGY
Description: SICFET N-CH 700V 37A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA (Typ), Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V.
Weitere Produktangebote MSC060SMA070S nach Preis ab 10.15 EUR bis 17.11 EUR
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MSC060SMA070S | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK Drain-source voltage: 700V Drain current: 26A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Kind of package: tube Gate charge: 56nC Technology: SiC Kind of channel: enhancement Pulsed drain current: 93A Mounting: SMD Case: D3PAK |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC060SMA070S | Hersteller : Microchip Technology |
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MSC060SMA070S | Hersteller : Microchip Technology |
Description: SICFET N-CH 700V 37A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA (Typ) Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V |
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