Technische Details MSC090SDA330B2 Microchip Technology
Description: SIC SBD 3300 V 90 A TO-247 MAX, Part Status: Active, Packaging: Bulk, Current - Average Rectified (Io): 184A, Capacitance @ Vr, F: 6326pF @ 1V, 1MHz, Current - Reverse Leakage @ Vr: 200 µA @ 3300 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 90 A, Voltage - DC Reverse (Vr) (Max): 3300 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2.
Weitere Produktangebote MSC090SDA330B2 nach Preis ab 638.09 EUR bis 638.09 EUR
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| MSC090SDA330B2 | Hersteller : Microchip Technology |
Description: SIC SBD 3300 V 90 A TO-247 MAX Part Status: Active Packaging: Bulk Current - Average Rectified (Io): 184A Capacitance @ Vr, F: 6326pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 200 µA @ 3300 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 90 A Voltage - DC Reverse (Vr) (Max): 3300 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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