MSC40SM120JCU2 Microchip Technology
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 73.78 EUR |
| 100+ | 63.96 EUR |
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Technische Details MSC40SM120JCU2 Microchip Technology
Description: SICFET N-CH 1.2KV 55A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Weitere Produktangebote MSC40SM120JCU2 nach Preis ab 79.34 EUR bis 79.34 EUR
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MSC40SM120JCU2 | Hersteller : Microchip Technology |
 Description: SICFET N-CH 1.2KV 55A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC40SM120JCU2 | Hersteller : Microchip Technology |
Boost Chopper SiC MOSFET Power Module |
Produkt ist nicht verfügbar |
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| MSC40SM120JCU2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: SiC Topology: boost chopper Pulsed drain current: 110A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 245W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSC40SM120JCU2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: SiC Topology: boost chopper Pulsed drain current: 110A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 245W |
Produkt ist nicht verfügbar |